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| STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE 30V/8.5A, RDS(ON) = 14m@VGS = 10V 30V/7.8A, RDS(ON) = 18m@VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number STN4972S8RG STN4972S8TG Package SOP-8 SOP-8 Part Marking STN4972 STN4972 Process Code : A ~ Z ; a ~ z STN9972S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb - Free STN9972S8TG S8 : SOP-8 ; T : Tube ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical 30 20 8.5 7.5 25 2.3 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Tran Conductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Turn-On Time Turn-Off Time Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS TJ=55 ID(on) RDS(on) VGS=0V,ID=250uA VDS=VGS,ID=250 uA VDS=0V,VGS=20V VDS=24VGS=0V VDS=24VGS=0V VDS5V,VGS=10 VGS=10V, ID=8.5A VGS=4.5V, ID=7.8A VDS=15.0V,ID=6.2A IS=2.3A,VGS=0V 30 1.0 3.0 100 1 5 25 0.012 0.014 0.015 0.018 V V nA uA A S 1.2 V gfs VSD 13 0.8 Qg Qgs Qgd Ciss Coss Crss td(on) tr VDS=15V,VGS=10V ID=2A 16 4.2 2.5 1350 nC VDS=15.0V,VGS=0V f=1MHz 258 150 15 20 16 40 20 pF td(off) tf VDD=15V,RL=15 ID=5A,VGEN=10V RG=1 6 20 12 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A TYPICAL CHARACTERICTICS (25 Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A TYPICAL CHARACTERICTICS (25 Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A TYPICAL CHARACTERICTICS (25 Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STN4972 2008. V1 |
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